| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格(人民幣) |
|---|---|---|---|---|
| VP0808B-E3 | Vishay/Siliconix | MOSFET 80V 3A 6.25W | 可訂貨 | 48:￥695.52 50:￥662.40 100:￥596.16 |
| SI6926AEDQ-T1-E3 | Vishay/Siliconix | MOSFET 20V 4.5A 0.83W | 可訂貨 | 2,120:￥3.52 3,000:￥3.04 |
| SI6441DQ-T1-GE3 | Vishay/Siliconix | MOSFET 30V 8.0A 1.75W 15mohm @ 10V | 可訂貨 | 1,880:￥10.49 3,000:￥8.49 6,000:￥8.35 |
| SIS330DN-T1-GE3 | Vishay/Siliconix | MOSFET 30 Volts 35 Amps 52 Watts | 可訂貨 | 1,830:￥3.86 3,000:￥3.24 6,000:￥3.11 12,000:￥2.97 |
| SI7444DP-T1-GE3 | Vishay/Siliconix | MOSFET 40V 23.6A 5.4W 6.1mohm @ 10V | 可訂貨 | 2,000:￥11.80 3,000:￥10.01 6,000:￥9.80 |
| 類別: | RF/IF 和 RFID >> MOSFET |
|---|---|
| 描述: | MOSFET 80V 3A 6.25W |
| RoHS: | 否 |
| PDF參數(shù): | |
| 制造商 | Vishay/Siliconix |
| 晶體管極性 | P-Channel |
| 汲極/源極擊穿電壓 | - 80 V |
| 閘/源擊穿電壓 | +/- 20 V |
| 漏極連續(xù)電流 | 0.88 A |
| 電阻汲極/源極 RDS（導(dǎo)通） | 5 Ohms |
| 配置 | Single |
| 最大工作溫度 | + 150 C |
| 安裝風(fēng)格 | Stud |
| 封裝 / 箱體 | TO-205AD |
| 封裝 | Bulk |