| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格(人民幣) |
|---|---|---|---|---|
| BSC049N03MSC G | Infineon Technologies | MOSFET N-KANAL POWER MOS | 可訂貨 | 3,600:￥2.73 5,000:￥2.59 10,000:￥2.49 25,000:￥2.44 |
| BSO108N03MSC G | Infineon Technologies | MOSFET N-KANAL POWER MOS | 可訂貨 | 1,450:￥2.47 2,000:￥2.04 2,500:￥2.04 5,000:￥1.90 10,000:￥1.83 25,000:￥1.76 |
| BSC037N03LSC G | Infineon Technologies | MOSFET N-KANAL POWER MOS | 可訂貨 | 3,600:￥3.37 5,000:￥3.21 10,000:￥3.08 25,000:￥3.02 |
| BSC043N03LSC G | Infineon Technologies | MOSFET N-KANAL POWER MOS | 可訂貨 | 3,600:￥3.21 5,000:￥3.05 10,000:￥2.93 25,000:￥2.86 |
| IPW60R045CPA | Infineon Technologies | MOSFET CoolMOS Power Transistor | 可訂貨 | 142:￥111.92 500:￥95.36 |
| 類別: | RF/IF 和 RFID >> MOSFET |
|---|---|
| 描述: | MOSFET N-KANAL POWER MOS |
| RoHS: | 否 |
| PDF參數(shù): | |
| 制造商 | Infineon Technologies |
| 晶體管極性 | N-Channel |
| 汲極/源極擊穿電壓 | 30 V |
| 閘/源擊穿電壓 | +/- 20 V |
| 漏極連續(xù)電流 | 16 A |
| 電阻汲極/源極 RDS（導(dǎo)通） | 0.0049 Ohms |
| 配置 | Single Quad Drain Triple Source |
| 最大工作溫度 | + 150 C |
| 安裝風(fēng)格 | SMD/SMT |
| 封裝 / 箱體 | TDSON |
| 封裝 | Reel |