參數資料
型號: 2SK2627
廠商: Sanyo Electric Co.,Ltd.
英文描述: Ultrahigh-Speed Switching Applications
中文描述: 超高速開關應用
文件頁數: 1/4頁
文件大小: 111K
代理商: 2SK2627
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
2SK2627
Ultrahigh-Speed Switching Applications
Ordering number:ENN6228A
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2000TS (KOTO) TA-2882 No.6228–1/4
7.8
3
8.2
0
0
4
1.0
2.54
1.0
2.54
5.08
8
1
1
0.3
0.6
0.6
0
7.8
5
6
10.0
6.0
2
1
2
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2128
[2SK2627]
Features
· Low ON-resistance.
· Low Qg.
C
C
Electrical Characteristics
at Ta = 25C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
Continued on next page.
Tc=25
°
C
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
e
g
g
a
V
a
V
)
C
D
s
P
(
D
r
w
e
p
m
e
p
m
e
e
(
c
o
c
o
t
t
o
P
e
T
e
T
S
S
-
D
-
G
n
D
n
D
w
o
n
a
h
C
a
S
V
V
S
S
S
S
D
G
ID
IP
D
PD
c
T
g
T
0
0
5
0
0
0
0
0
3
6
±
V
V
A
A
W
e
C
e
C
e
a
l
n
e
g
)
s
2
4
5
5
n
o
p
h
1
1
+
o
5
5
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
6
m
p
x
a
m
e
g
a
V
t
e
C
e
C
n
w
o
d
k
a
n
D
a
k
a
e
B
e
g
e
L
e
c
o
a
V
c
o
g
a
V
a
T
d
w
-
D
c
S
a
C
t
p
n
C
t
p
O
e
s
v
e
R
S
-
D
-
Z
-
G
f
C
r
F
V
S
S
D
S
S
)
S
s
)
R
D
G
G
|
B
I
I
(
ID
VS
D
VS
G
VS
D
VS
D
ID
=
VS
D
VS
D
VS
D
V
V
V
0
I
V
I
V
0
V
,
A
V
0
2
V
0
2
=
0
2
=
,
0
A
0
6
±
=
1
=
1
=
5
=
m
=
1
=
S
V
V
G
,
,
0
=
0
0
V
e
G
S
S
S
S
m
1
5
=
1
=
M
1
M
1
M
1
G
D
=
0
0
A
A
V
z
z
z
=
=
0
0
1
5
A
A
V
S
F
p
F
p
F
p
m
n
t
e
g
e
S
3
0
0
±
e
r
n
V
D
D
5
5
e
e
S
c
n
a
m
O
e
d
A
c
o
e
c
c
n
C
|
0
5
0
7
2
2
1
1
e
c
n
a
e
R
-
S
n
R
)
s
s
s
s
s
C
o
S
s
C
o
C
D
S
G
5
H
H
H
0
a
a
a
p
a
a
T
p
=
=
=
V
0
0
0
e
a
r
n
e
c
n
a
a
p
a
PW
10
μ
s, duty cycle
1%
相關PDF資料
PDF描述
2SK2631 Ultrahigh-Speed Switching Applications
2SK2684 Silicon N Channel DV-L MOS FET(N溝道 DV-L MOSFET)
2SK2684L Silicon N Channel DV-L MOS FET(N溝道 DV-L MOSFET)
2SK2734 Silicon N Channel MOS FET(N溝道MOSFET)
2SK2735L Silicon N Channel MOS FET High Speed Power Switching
相關代理商/技術參數
參數描述
2SK2628ALS 制造商:SANYO 功能描述:MOSFET,N CH,600V,7A,TO-220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH600V7ATO-220FI
2SK2631-TL-E 制造商:SANYO 功能描述:Nch 800V 1A 10@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 800V 1A TO251 制造商:Sanyo 功能描述:0
2SK2632LS 功能描述:MOSFET N-CH 800V 2.5A TO-220FI RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SK2638-01MRSC 制造商:Fuji Electric 功能描述:
2SK2640 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR